在半導(dǎo)體材料的制備過程中，每一道工序都涉及到清洗，而且清洗的好壞直接影響下一道工序，甚影響器件的成品率和可靠性。由于ULSI集成度的迅速提高和器件尺寸的減小，對于晶片表面沾污的要求更加嚴(yán)格，ULSI工藝要求在提供的襯底片上吸附物不多于500個/m2×0.12um，金屬污染小于 1010atom/cm2。晶片生產(chǎn)中每一道工序存在的潛在污染，都可導(dǎo)致缺陷的產(chǎn)生和器件的失效。
In the preparation process of semiconductor materials, each process involves cleaning, and the quality of cleaning directly affects the next process, and even affects the yield and reliability of devices. Due to the rapid improvement of ULSI integration and the reduction of device size, the requirements for chip surface contamination are more stringent. ULSI process requires that the adsorbates on the provided substrate should not be more than 500/m2 × 0.12um, metal pollution is less than 1010atom/cm2. The potential pollution in each process of wafer production can lead to defects and device failure.
因此，硅片的清洗引起了人士的重視。以前很多廠家都用手洗的方法，這種方法人為的因素較多，一方面容易產(chǎn)生碎片，經(jīng)濟(jì)效益下降，另一方面手洗的硅片表面潔凈度差，污染嚴(yán)重，使下道工序化拋腐蝕過程中的合格率較低。所以，硅片的清洗技術(shù)引起了人們的重視，找到一種簡單有效的清洗方法是當(dāng)務(wù)之急。本文介紹了一種超聲波清洗技術(shù)，其清洗硅片的效果顯著，是一種值得推廣的硅片清洗技術(shù)。
Therefore, the cleaning of silicon wafers has attracted the attention of professionals. In the past, many manufacturers have used the hand-washing method. This method has many human factors. On the one hand, it is easy to produce debris and reduce economic benefits. On the other hand, the surface cleanliness of hand-washing silicon wafers is poor, and the pollution is serious, making the qualification rate in the next process of chemical polishing and corrosion low. Therefore, the cleaning technology of silicon wafers has attracted people's attention. It is urgent to find a simple and effective cleaning method. This paper introduces a kind of ultrasonic cleaning technology, which has a remarkable effect on cleaning silicon wafers and is worth popularizing.
硅片表面污染的原因
Reasons for surface contamination of silicon wafers

晶片表面層原子因垂直切片方向的化學(xué)鍵被破壞而成為懸空鍵，形成表面附近的自由力場，尤其磨片是在鑄鐵磨盤上進(jìn)行，所以鐵離子的污染更加嚴(yán)重。同時，由于磨料中的金剛砂粒徑較大，造成磨片后的硅片破損層較大，懸掛鍵數(shù)目增多，極易吸附各種雜質(zhì)，如顆粒、有機(jī)雜質(zhì)、無機(jī)雜質(zhì)、金屬離子、硅粉粉塵等，造成磨片后的硅片易發(fā)生變花、發(fā)藍(lán)、發(fā)黑等現(xiàn)象，使磨片不合格。
The atoms on the surface layer of the wafer become suspended bonds due to the destruction of the chemical bonds in the vertical direction of the slice, forming a free force field near the surface, especially when the grinding is carried out on the cast iron grinding plate, so the pollution of iron ions is more serious. At the same time, due to the larger size of carborundum particles in the abrasive, the damaged layer of the silicon wafer after grinding is larger, the number of hanging keys is increased, and it is very easy to absorb various impurities, such as particles, organic impurities, inorganic impurities, metal ions, silicon powder dust, etc., resulting in the silicon wafer after grinding is prone to flower, blue, black and other phenomena, making the grinding disc unqualified.
硅片清洗的目的是要除去各類污染物，清洗的潔凈程度直接決定著ULSI向更高集成度、可靠性、成品率發(fā)展，這涉及到高凈化的環(huán)境、水、化學(xué)試劑和相應(yīng)的設(shè)備及配套工藝，難度越來越大，可見半導(dǎo)體行業(yè)中清洗工藝的重要性。
The purpose of silicon wafer cleaning is to remove all kinds of pollutants. The degree of cleaning directly determines the development of ULSI towards higher integration, reliability, and yield. This involves highly purified environment, water, chemical reagents, and corresponding equipment and supporting processes. It is increasingly difficult, which shows the importance of cleaning process in the semiconductor industry.
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